Electrical properties of field-effect transistor with interlinked ZnO tetrapod network as an active layer

• المؤلفون الرئيسيون: Ponhan W., Thepnurat M., Phadungdhitidhada S., Wongratanaphisan D., Choopun S.
• التنسيق: دورية
• منشور في: 2017
• الوصول للمادة أونلاين: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84963976875&origin=inward; http://cmuir.cmu.ac.th/jspui/handle/6653943832/41309
• المؤسسة: Chiang Mai University

© 2016 Elsevier B.V. In this work, we have investigated the thin film based field-effect transistor (FET) with interlinked ZnO tetrapod network (ITN-ZnO) used as an active channel layer. The ITN-ZnOs were synthesized by microwave assisted thermal oxidation technique. A ZnO FET with bottom gate struc...