Optical properties of Zn<inf>2</inf>TiO<inf>4</inf> prepared by thermal oxidation method

Zn-TiO 2 thick films were prepared by using thermal oxidation method at 1000°C for 24 h under normal atmosphere, for 0, 10, 20 and 30 mol% of TiO 2 . The thick films were characterized using XRD, FE-SEM, EDS, and RS. The results indicated that the thick films consisted of hexagonal wurtzite ZnO and...

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Bibliographic Details
Main Authors: Santhaveesuk T., Wongratanaphisan D., Choopun S.
Format: Conference Proceeding
Published: 2017
Online Access:https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=77951659181&origin=inward
http://cmuir.cmu.ac.th/jspui/handle/6653943832/43310
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Institution: Chiang Mai University
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Summary:Zn-TiO 2 thick films were prepared by using thermal oxidation method at 1000°C for 24 h under normal atmosphere, for 0, 10, 20 and 30 mol% of TiO 2 . The thick films were characterized using XRD, FE-SEM, EDS, and RS. The results indicated that the thick films consisted of hexagonal wurtzite ZnO and face-center cubic Zn 2 TiO 4 phases, for 10-30 mol% of TiO 2 . The Zn 2 TiO 4 phase was increased as the increasing of the mol% of TiO 2 and became a major phase when TiO 2 reached 30 mol%, in distinction with ZnO. The optical energy band gap of thick films was measured by the help of reflection spectra. The optical energy band gap were ranging from about 3.30-3.58 eV, as the mol% of TiO 2 increased from 0-30. ©2010 IEEE.