Optical properties of Zn<inf>2</inf>TiO<inf>4</inf> prepared by thermal oxidation method
Zn-TiO 2 thick films were prepared by using thermal oxidation method at 1000°C for 24 h under normal atmosphere, for 0, 10, 20 and 30 mol% of TiO 2 . The thick films were characterized using XRD, FE-SEM, EDS, and RS. The results indicated that the thick films consisted of hexagonal wurtzite ZnO and...
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th-cmuir.6653943832-433102017-09-28T06:54:03Z Optical properties of Zn<inf>2</inf>TiO<inf>4</inf> prepared by thermal oxidation method Santhaveesuk T. Wongratanaphisan D. Choopun S. Zn-TiO 2 thick films were prepared by using thermal oxidation method at 1000°C for 24 h under normal atmosphere, for 0, 10, 20 and 30 mol% of TiO 2 . The thick films were characterized using XRD, FE-SEM, EDS, and RS. The results indicated that the thick films consisted of hexagonal wurtzite ZnO and face-center cubic Zn 2 TiO 4 phases, for 10-30 mol% of TiO 2 . The Zn 2 TiO 4 phase was increased as the increasing of the mol% of TiO 2 and became a major phase when TiO 2 reached 30 mol%, in distinction with ZnO. The optical energy band gap of thick films was measured by the help of reflection spectra. The optical energy band gap were ranging from about 3.30-3.58 eV, as the mol% of TiO 2 increased from 0-30. ©2010 IEEE. 2017-09-28T06:54:03Z 2017-09-28T06:54:03Z 2010-05-05 Conference Proceeding 2-s2.0-77951659181 10.1109/INEC.2010.5424934 https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=77951659181&origin=inward http://cmuir.cmu.ac.th/jspui/handle/6653943832/43310 |
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Zn-TiO 2 thick films were prepared by using thermal oxidation method at 1000°C for 24 h under normal atmosphere, for 0, 10, 20 and 30 mol% of TiO 2 . The thick films were characterized using XRD, FE-SEM, EDS, and RS. The results indicated that the thick films consisted of hexagonal wurtzite ZnO and face-center cubic Zn 2 TiO 4 phases, for 10-30 mol% of TiO 2 . The Zn 2 TiO 4 phase was increased as the increasing of the mol% of TiO 2 and became a major phase when TiO 2 reached 30 mol%, in distinction with ZnO. The optical energy band gap of thick films was measured by the help of reflection spectra. The optical energy band gap were ranging from about 3.30-3.58 eV, as the mol% of TiO 2 increased from 0-30. ©2010 IEEE. |
format |
Conference Proceeding |
author |
Santhaveesuk T. Wongratanaphisan D. Choopun S. |
spellingShingle |
Santhaveesuk T. Wongratanaphisan D. Choopun S. Optical properties of Zn<inf>2</inf>TiO<inf>4</inf> prepared by thermal oxidation method |
author_facet |
Santhaveesuk T. Wongratanaphisan D. Choopun S. |
author_sort |
Santhaveesuk T. |
title |
Optical properties of Zn<inf>2</inf>TiO<inf>4</inf> prepared by thermal oxidation method |
title_short |
Optical properties of Zn<inf>2</inf>TiO<inf>4</inf> prepared by thermal oxidation method |
title_full |
Optical properties of Zn<inf>2</inf>TiO<inf>4</inf> prepared by thermal oxidation method |
title_fullStr |
Optical properties of Zn<inf>2</inf>TiO<inf>4</inf> prepared by thermal oxidation method |
title_full_unstemmed |
Optical properties of Zn<inf>2</inf>TiO<inf>4</inf> prepared by thermal oxidation method |
title_sort |
optical properties of zn<inf>2</inf>tio<inf>4</inf> prepared by thermal oxidation method |
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2017 |
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https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=77951659181&origin=inward http://cmuir.cmu.ac.th/jspui/handle/6653943832/43310 |
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