Thermoelectric properties of phosphorus-doped indium tellurosilicate: InSiTe<inf>3</inf>
© 2017 Elsevier B.V. Polycrystalline samples of undoped and doped indium tellurosilicate: InSiTe 3 were synthesized and their thermoelectric (TE) properties were investigated in the temperature range from 323 to 723 K. Phosphorus (P) was selected as an electron dopant, i.e., the starting composition...
Saved in:
| Main Authors: | , , |
|---|---|
| Format: | Journal |
| Published: |
2018
|
| Online Access: | https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85033573264&origin=inward http://cmuir.cmu.ac.th/jspui/handle/6653943832/43831 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Institution: | Chiang Mai University |