Thermoelectric properties of phosphorus-doped indium tellurosilicate: InSiTe<inf>3</inf>
© 2017 Elsevier B.V. Polycrystalline samples of undoped and doped indium tellurosilicate: InSiTe 3 were synthesized and their thermoelectric (TE) properties were investigated in the temperature range from 323 to 723 K. Phosphorus (P) was selected as an electron dopant, i.e., the starting composition...
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| Main Authors: | , , |
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| Format: | Journal |
| Published: |
2018
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| Online Access: | https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85033573264&origin=inward http://cmuir.cmu.ac.th/jspui/handle/6653943832/43831 |
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| Institution: | Chiang Mai University |
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