Manganese²⁺-doped copper tin telluride absorber layer-sensitized solar cells

• المؤلفون الرئيسيون: Panupong Sangsuriyawong, Auttasit Tubtimtae, Veeramol Vailikhit, Pichanan Teesetsopon, Supab Choopun
• التنسيق: دورية
• منشور في: 2018
• الوصول للمادة أونلاين: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85040131333&origin=inward; http://cmuir.cmu.ac.th/jspui/handle/6653943832/43930
• المؤسسة: Chiang Mai University

© 2018 American Scientific Publishers. Manganese 2+ -doped copper tin telluride nanoparticles (Mn 2+ :Cu 2 SnTe 3 NPs), as an absorber layer, were grown using a chemical bath deposition (CBD) technique and demonstrated for solar cell applications. The cubical structure was formed on the WO 3 surface with the band gap (Eg) of Cu 2 SnTe 3 NPs decreased from 1.80 to 1.67 eV after Mn 2+ doping. The photovoltaic property at 1 sun shows the efficiency (η) of 0.276%. The η was increased with reducing sunlight intensity due to the lower carrier recombination process at an electrode and electrolyte interface, which leads to the increasing η. The highest η of 1.120% was yielded at 0.1 sun with a J sc = 2.81 mA/cm 2 , a Voc = 0.148 V, a FF = 26.8%. It can be noted that this kind of material and a synthesis procedure can be feasibly further improved for a higher efficiency and more stability on an absorber layer.