Manganese<sup>2+</sup>-doped copper tin telluride absorber layer-sensitized solar cells
© 2018 American Scientific Publishers. Manganese 2+ -doped copper tin telluride nanoparticles (Mn 2+ :Cu 2 SnTe 3 NPs), as an absorber layer, were grown using a chemical bath deposition (CBD) technique and demonstrated for solar cell applications. The cubical structure was formed on the WO 3 surface...
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th-cmuir.6653943832-439302018-01-24T04:15:20Z Manganese<sup>2+</sup>-doped copper tin telluride absorber layer-sensitized solar cells Panupong Sangsuriyawong Auttasit Tubtimtae Veeramol Vailikhit Pichanan Teesetsopon Supab Choopun © 2018 American Scientific Publishers. Manganese 2+ -doped copper tin telluride nanoparticles (Mn 2+ :Cu 2 SnTe 3 NPs), as an absorber layer, were grown using a chemical bath deposition (CBD) technique and demonstrated for solar cell applications. The cubical structure was formed on the WO 3 surface with the band gap (Eg) of Cu 2 SnTe 3 NPs decreased from 1.80 to 1.67 eV after Mn 2+ doping. The photovoltaic property at 1 sun shows the efficiency (η) of 0.276%. The η was increased with reducing sunlight intensity due to the lower carrier recombination process at an electrode and electrolyte interface, which leads to the increasing η. The highest η of 1.120% was yielded at 0.1 sun with a J sc = 2.81 mA/cm 2 , a Voc = 0.148 V, a FF = 26.8%. It can be noted that this kind of material and a synthesis procedure can be feasibly further improved for a higher efficiency and more stability on an absorber layer. 2018-01-24T04:15:20Z 2018-01-24T04:15:20Z 2018-01-01 Journal 15334899 15334880 2-s2.0-85040131333 10.1166/jnn.2018.15224 https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85040131333&origin=inward http://cmuir.cmu.ac.th/jspui/handle/6653943832/43930 |
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© 2018 American Scientific Publishers. Manganese 2+ -doped copper tin telluride nanoparticles (Mn 2+ :Cu 2 SnTe 3 NPs), as an absorber layer, were grown using a chemical bath deposition (CBD) technique and demonstrated for solar cell applications. The cubical structure was formed on the WO 3 surface with the band gap (Eg) of Cu 2 SnTe 3 NPs decreased from 1.80 to 1.67 eV after Mn 2+ doping. The photovoltaic property at 1 sun shows the efficiency (η) of 0.276%. The η was increased with reducing sunlight intensity due to the lower carrier recombination process at an electrode and electrolyte interface, which leads to the increasing η. The highest η of 1.120% was yielded at 0.1 sun with a J sc = 2.81 mA/cm 2 , a Voc = 0.148 V, a FF = 26.8%. It can be noted that this kind of material and a synthesis procedure can be feasibly further improved for a higher efficiency and more stability on an absorber layer. |
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Panupong Sangsuriyawong Auttasit Tubtimtae Veeramol Vailikhit Pichanan Teesetsopon Supab Choopun |
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Panupong Sangsuriyawong Auttasit Tubtimtae Veeramol Vailikhit Pichanan Teesetsopon Supab Choopun Manganese<sup>2+</sup>-doped copper tin telluride absorber layer-sensitized solar cells |
author_facet |
Panupong Sangsuriyawong Auttasit Tubtimtae Veeramol Vailikhit Pichanan Teesetsopon Supab Choopun |
author_sort |
Panupong Sangsuriyawong |
title |
Manganese<sup>2+</sup>-doped copper tin telluride absorber layer-sensitized solar cells |
title_short |
Manganese<sup>2+</sup>-doped copper tin telluride absorber layer-sensitized solar cells |
title_full |
Manganese<sup>2+</sup>-doped copper tin telluride absorber layer-sensitized solar cells |
title_fullStr |
Manganese<sup>2+</sup>-doped copper tin telluride absorber layer-sensitized solar cells |
title_full_unstemmed |
Manganese<sup>2+</sup>-doped copper tin telluride absorber layer-sensitized solar cells |
title_sort |
manganese<sup>2+</sup>-doped copper tin telluride absorber layer-sensitized solar cells |
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2018 |
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https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85040131333&origin=inward http://cmuir.cmu.ac.th/jspui/handle/6653943832/43930 |
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