Effect of Ba-substitution on the structure and properties of Pb 0.8Ba0.2[(In1/2Nb1/2) 1-xTix]O3 ceramics
Ferroelectric ceramics with formula Pb0.8Ba 0.2[(In1/2Nb1/2)1-xTi x]O3 (PBINT) (x=0.0,0.1,0.2,0.3,0.4 and 0.5) were prepared via a two-step solid state reaction method. It was found that ceramics with compositions in the range of x=0.0 ∼ 0.3 showed a pseudo-cubic structure, whereas the ceramic with...
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th-cmuir.6653943832-52022014-08-30T02:56:16Z Effect of Ba-substitution on the structure and properties of Pb 0.8Ba0.2[(In1/2Nb1/2) 1-xTix]O3 ceramics Wongsaenmai S. Qu W. Ananta S. Yimnirun R. Tan X. Ferroelectric ceramics with formula Pb0.8Ba 0.2[(In1/2Nb1/2)1-xTi x]O3 (PBINT) (x=0.0,0.1,0.2,0.3,0.4 and 0.5) were prepared via a two-step solid state reaction method. It was found that ceramics with compositions in the range of x=0.0 ∼ 0.3 showed a pseudo-cubic structure, whereas the ceramic with x=0.5 displayed a tetragonal structure. All compositions showed significant frequency dispersion in their dielectric properties. The remanent polarization Pr as well as the coercive field Ec, measured at room temperature, increases with the Ti content. The experimental results obtained in this system are summarized into a phase diagram, with the morphotropic phase boundary (MPB) located at x=0.4. Compared with the Pb[(In1/2Nb1/2)1-xTi x]O3 solid solution system, incorporating Ba in the A-site leads to a significant decrease in the dielectric maximum temperature T max, a suppression of the dielectric relaxation parameter γ, and a shift of the MPB composition to a higher Ti content. © Springer-Verlag 2007. 2014-08-30T02:56:16Z 2014-08-30T02:56:16Z 2007 Article 09478396 10.1007/s00339-007-4064-z APAMF http://www.scopus.com/inward/record.url?eid=2-s2.0-34547274951&partnerID=40&md5=84cd84aa8f46f121dad1451605815d98 http://cmuir.cmu.ac.th/handle/6653943832/5202 English |
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Ferroelectric ceramics with formula Pb0.8Ba 0.2[(In1/2Nb1/2)1-xTi x]O3 (PBINT) (x=0.0,0.1,0.2,0.3,0.4 and 0.5) were prepared via a two-step solid state reaction method. It was found that ceramics with compositions in the range of x=0.0 ∼ 0.3 showed a pseudo-cubic structure, whereas the ceramic with x=0.5 displayed a tetragonal structure. All compositions showed significant frequency dispersion in their dielectric properties. The remanent polarization Pr as well as the coercive field Ec, measured at room temperature, increases with the Ti content. The experimental results obtained in this system are summarized into a phase diagram, with the morphotropic phase boundary (MPB) located at x=0.4. Compared with the Pb[(In1/2Nb1/2)1-xTi x]O3 solid solution system, incorporating Ba in the A-site leads to a significant decrease in the dielectric maximum temperature T max, a suppression of the dielectric relaxation parameter γ, and a shift of the MPB composition to a higher Ti content. © Springer-Verlag 2007. |
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Wongsaenmai S. Qu W. Ananta S. Yimnirun R. Tan X. |
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Wongsaenmai S. Qu W. Ananta S. Yimnirun R. Tan X. Effect of Ba-substitution on the structure and properties of Pb 0.8Ba0.2[(In1/2Nb1/2) 1-xTix]O3 ceramics |
author_facet |
Wongsaenmai S. Qu W. Ananta S. Yimnirun R. Tan X. |
author_sort |
Wongsaenmai S. |
title |
Effect of Ba-substitution on the structure and properties of Pb 0.8Ba0.2[(In1/2Nb1/2) 1-xTix]O3 ceramics |
title_short |
Effect of Ba-substitution on the structure and properties of Pb 0.8Ba0.2[(In1/2Nb1/2) 1-xTix]O3 ceramics |
title_full |
Effect of Ba-substitution on the structure and properties of Pb 0.8Ba0.2[(In1/2Nb1/2) 1-xTix]O3 ceramics |
title_fullStr |
Effect of Ba-substitution on the structure and properties of Pb 0.8Ba0.2[(In1/2Nb1/2) 1-xTix]O3 ceramics |
title_full_unstemmed |
Effect of Ba-substitution on the structure and properties of Pb 0.8Ba0.2[(In1/2Nb1/2) 1-xTix]O3 ceramics |
title_sort |
effect of ba-substitution on the structure and properties of pb 0.8ba0.2[(in1/2nb1/2) 1-xtix]o3 ceramics |
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2014 |
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http://www.scopus.com/inward/record.url?eid=2-s2.0-34547274951&partnerID=40&md5=84cd84aa8f46f121dad1451605815d98 http://cmuir.cmu.ac.th/handle/6653943832/5202 |
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