Utility of dual frequency hybrid source for plasma and radical generation in plasma enhanced chemical vapor deposition process
© 2015 The Japan Society of Applied Physics. Looking into the aspect of material processing, this work evaluates alternative plasma concepts in SiH<inf>4</inf>/H<inf>2</inf> plasmas to investigate the radical and plasma generation in the plasma enhanced chemical vapor deposit...
محفوظ في:
| المؤلفون الرئيسيون: | , , , |
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| التنسيق: | دورية |
| منشور في: |
2018
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| الموضوعات: | |
| الوصول للمادة أونلاين: | https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84933555767&origin=inward http://cmuir.cmu.ac.th/jspui/handle/6653943832/54536 |
| الوسوم: |
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| الملخص: | © 2015 The Japan Society of Applied Physics. Looking into the aspect of material processing, this work evaluates alternative plasma concepts in SiH<inf>4</inf>/H<inf>2</inf> plasmas to investigate the radical and plasma generation in the plasma enhanced chemical vapor deposition (PECVD) synthesis of nanocrystalline Si (nc-Si:H). Simultaneous measurements by vacuum ultraviolet absorption spectroscopy (VUVAS), optical emission spectroscopy (OES), and radio frequency (RF) compensated Langmuir probe (LP) reveal that RF/ultrahigh frequency (UHF) hybrid source can efficiently produce H radicals and plasmas that are accountable for nc-Si:H film synthesis. The efficacy of hybrid plasmas is also discussed. |
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