Utility of dual frequency hybrid source for plasma and radical generation in plasma enhanced chemical vapor deposition process

Utility of dual frequency hybrid source for plasma and radical generation in plasma enhanced chemical vapor deposition process

© 2015 The Japan Society of Applied Physics. Looking into the aspect of material processing, this work evaluates alternative plasma concepts in SiH<inf>4</inf>/H<inf>2</inf> plasmas to investigate the radical and plasma generation in the plasma enhanced chemical vapor deposit...

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Bibliographic Details
Main Authors: Kyung Sik Shin, Bibhuti Bhusan Sahu, Jeon Geon Han, Masaru Hori
Format: Journal
Published: 2018
Subjects:
Engineering
Physics and Astronomy
Online Access:https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84933555767&origin=inward
http://cmuir.cmu.ac.th/jspui/handle/6653943832/54536
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Institution: Chiang Mai University
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Summary:© 2015 The Japan Society of Applied Physics. Looking into the aspect of material processing, this work evaluates alternative plasma concepts in SiH<inf>4</inf>/H<inf>2</inf> plasmas to investigate the radical and plasma generation in the plasma enhanced chemical vapor deposition (PECVD) synthesis of nanocrystalline Si (nc-Si:H). Simultaneous measurements by vacuum ultraviolet absorption spectroscopy (VUVAS), optical emission spectroscopy (OES), and radio frequency (RF) compensated Langmuir probe (LP) reveal that RF/ultrahigh frequency (UHF) hybrid source can efficiently produce H radicals and plasmas that are accountable for nc-Si:H film synthesis. The efficacy of hybrid plasmas is also discussed.

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