Utility of dual frequency hybrid source for plasma and radical generation in plasma enhanced chemical vapor deposition process
© 2015 The Japan Society of Applied Physics. Looking into the aspect of material processing, this work evaluates alternative plasma concepts in SiH<inf>4</inf>/H<inf>2</inf> plasmas to investigate the radical and plasma generation in the plasma enhanced chemical vapor deposit...
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th-cmuir.6653943832-545362018-09-04T10:26:28Z Utility of dual frequency hybrid source for plasma and radical generation in plasma enhanced chemical vapor deposition process Kyung Sik Shin Bibhuti Bhusan Sahu Jeon Geon Han Masaru Hori Engineering Physics and Astronomy © 2015 The Japan Society of Applied Physics. Looking into the aspect of material processing, this work evaluates alternative plasma concepts in SiH<inf>4</inf>/H<inf>2</inf> plasmas to investigate the radical and plasma generation in the plasma enhanced chemical vapor deposition (PECVD) synthesis of nanocrystalline Si (nc-Si:H). Simultaneous measurements by vacuum ultraviolet absorption spectroscopy (VUVAS), optical emission spectroscopy (OES), and radio frequency (RF) compensated Langmuir probe (LP) reveal that RF/ultrahigh frequency (UHF) hybrid source can efficiently produce H radicals and plasmas that are accountable for nc-Si:H film synthesis. The efficacy of hybrid plasmas is also discussed. 2018-09-04T10:15:44Z 2018-09-04T10:15:44Z 2015-01-01 Journal 13474065 00214922 2-s2.0-84933555767 10.7567/JJAP.54.076201 https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84933555767&origin=inward http://cmuir.cmu.ac.th/jspui/handle/6653943832/54536 |
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Engineering Physics and Astronomy Kyung Sik Shin Bibhuti Bhusan Sahu Jeon Geon Han Masaru Hori Utility of dual frequency hybrid source for plasma and radical generation in plasma enhanced chemical vapor deposition process |
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© 2015 The Japan Society of Applied Physics. Looking into the aspect of material processing, this work evaluates alternative plasma concepts in SiH<inf>4</inf>/H<inf>2</inf> plasmas to investigate the radical and plasma generation in the plasma enhanced chemical vapor deposition (PECVD) synthesis of nanocrystalline Si (nc-Si:H). Simultaneous measurements by vacuum ultraviolet absorption spectroscopy (VUVAS), optical emission spectroscopy (OES), and radio frequency (RF) compensated Langmuir probe (LP) reveal that RF/ultrahigh frequency (UHF) hybrid source can efficiently produce H radicals and plasmas that are accountable for nc-Si:H film synthesis. The efficacy of hybrid plasmas is also discussed. |
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Journal |
author |
Kyung Sik Shin Bibhuti Bhusan Sahu Jeon Geon Han Masaru Hori |
author_facet |
Kyung Sik Shin Bibhuti Bhusan Sahu Jeon Geon Han Masaru Hori |
author_sort |
Kyung Sik Shin |
title |
Utility of dual frequency hybrid source for plasma and radical generation in plasma enhanced chemical vapor deposition process |
title_short |
Utility of dual frequency hybrid source for plasma and radical generation in plasma enhanced chemical vapor deposition process |
title_full |
Utility of dual frequency hybrid source for plasma and radical generation in plasma enhanced chemical vapor deposition process |
title_fullStr |
Utility of dual frequency hybrid source for plasma and radical generation in plasma enhanced chemical vapor deposition process |
title_full_unstemmed |
Utility of dual frequency hybrid source for plasma and radical generation in plasma enhanced chemical vapor deposition process |
title_sort |
utility of dual frequency hybrid source for plasma and radical generation in plasma enhanced chemical vapor deposition process |
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2018 |
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https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84933555767&origin=inward http://cmuir.cmu.ac.th/jspui/handle/6653943832/54536 |
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