Low-energy plasma immersion ion implantation to induce DNA transfer into bacterial E. coli

© 2015 Elsevier B.V. Plasma immersion ion implantation (PIII) at low energy was for the first time applied as a novel biotechnology to induce DNA transfer into bacterial cells. Argon or nitrogen PIII at low bias voltages of 2.5, 5 and 10 kV and fluences ranging from 1 × 1012to 1 × 1017ions/cm2treate...

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Bibliographic Details
Main Authors: K. Sangwijit, L. D. Yu, S. Sarapirom, S. Pitakrattananukool, S. Anuntalabhochai
Format: Journal
Published: 2018
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Online Access:https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84948575625&origin=inward
http://cmuir.cmu.ac.th/jspui/handle/6653943832/54858
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Institution: Chiang Mai University
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Summary:© 2015 Elsevier B.V. Plasma immersion ion implantation (PIII) at low energy was for the first time applied as a novel biotechnology to induce DNA transfer into bacterial cells. Argon or nitrogen PIII at low bias voltages of 2.5, 5 and 10 kV and fluences ranging from 1 × 1012to 1 × 1017ions/cm2treated cells of Escherichia coli (E. coli). Subsequently, DNA transfer was operated by mixing the PIII-treated cells with DNA. Successes in PIII-induced DNA transfer were demonstrated by marker gene expressions. The induction of DNA transfer was ion-energy, fluence and DNA-size dependent. The DNA transferred in the cells was confirmed functioning. Mechanisms of the PIII-induced DNA transfer were investigated and discussed in terms of the E. coli cell envelope anatomy. Compared with conventional ion-beam-induced DNA transfer, PIII-induced DNA transfer was simpler with lower cost but higher efficiency.