Electrical properties of field-effect transistor with interlinked ZnO tetrapod network as an active layer

Electrical properties of field-effect transistor with interlinked ZnO tetrapod network as an active layer

© 2016 Elsevier B.V. In this work, we have investigated the thin film based field-effect transistor (FET) with interlinked ZnO tetrapod network (ITN-ZnO) used as an active channel layer. The ITN-ZnOs were synthesized by microwave assisted thermal oxidation technique. A ZnO FET with bottom gate struc...

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Main Authors: Witawat Ponhan, Meechai Thepnurat, Surachet Phadungdhitidhada, Duangmanee Wongratanaphisan, Supab Choopun
Format: Journal
Published: 2018
Subjects:
Chemistry
Materials Science
Physics and Astronomy
Online Access:https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84963976875&origin=inward
http://cmuir.cmu.ac.th/jspui/handle/6653943832/55420
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Institution: Chiang Mai University
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spelling th-cmuir.6653943832-554202018-09-05T03:13:04Z Electrical properties of field-effect transistor with interlinked ZnO tetrapod network as an active layer Witawat Ponhan Meechai Thepnurat Surachet Phadungdhitidhada Duangmanee Wongratanaphisan Supab Choopun Chemistry Materials Science Physics and Astronomy © 2016 Elsevier B.V. In this work, we have investigated the thin film based field-effect transistor (FET) with interlinked ZnO tetrapod network (ITN-ZnO) used as an active channel layer. The ITN-ZnOs were synthesized by microwave assisted thermal oxidation technique. A ZnO FET with bottom gate structure was fabricated and investigated in terms of electrical properties. X-ray diffraction pattern revealed the wurtzite hexagonal structure of the ITN-ZnO. A drain current on/off ratio of 104, the off-state current as low as 10 nA, the threshold voltage of 10 V, field effect mobility of 7.939 cm2/Vs and sub-threshold swing of 1.4 V/decade were obtained. These results suggested that ITN-ZnO could be applied for FET, which could be operated in an enhancement mode. 2018-09-05T02:55:34Z 2018-09-05T02:55:34Z 2016-11-25 Journal 02578972 2-s2.0-84963976875 10.1016/j.surfcoat.2016.04.022 https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84963976875&origin=inward http://cmuir.cmu.ac.th/jspui/handle/6653943832/55420
institution Chiang Mai University
building Chiang Mai University Library
country Thailand
collection CMU Intellectual Repository
topic Chemistry
Materials Science
Physics and Astronomy
spellingShingle Chemistry
Materials Science
Physics and Astronomy
Witawat Ponhan
Meechai Thepnurat
Surachet Phadungdhitidhada
Duangmanee Wongratanaphisan
Supab Choopun
Electrical properties of field-effect transistor with interlinked ZnO tetrapod network as an active layer
description © 2016 Elsevier B.V. In this work, we have investigated the thin film based field-effect transistor (FET) with interlinked ZnO tetrapod network (ITN-ZnO) used as an active channel layer. The ITN-ZnOs were synthesized by microwave assisted thermal oxidation technique. A ZnO FET with bottom gate structure was fabricated and investigated in terms of electrical properties. X-ray diffraction pattern revealed the wurtzite hexagonal structure of the ITN-ZnO. A drain current on/off ratio of 104, the off-state current as low as 10 nA, the threshold voltage of 10 V, field effect mobility of 7.939 cm2/Vs and sub-threshold swing of 1.4 V/decade were obtained. These results suggested that ITN-ZnO could be applied for FET, which could be operated in an enhancement mode.
format Journal
author Witawat Ponhan
Meechai Thepnurat
Surachet Phadungdhitidhada
Duangmanee Wongratanaphisan
Supab Choopun
author_facet Witawat Ponhan
Meechai Thepnurat
Surachet Phadungdhitidhada
Duangmanee Wongratanaphisan
Supab Choopun
author_sort Witawat Ponhan
title Electrical properties of field-effect transistor with interlinked ZnO tetrapod network as an active layer
title_short Electrical properties of field-effect transistor with interlinked ZnO tetrapod network as an active layer
title_full Electrical properties of field-effect transistor with interlinked ZnO tetrapod network as an active layer
title_fullStr Electrical properties of field-effect transistor with interlinked ZnO tetrapod network as an active layer
title_full_unstemmed Electrical properties of field-effect transistor with interlinked ZnO tetrapod network as an active layer
title_sort electrical properties of field-effect transistor with interlinked zno tetrapod network as an active layer
publishDate 2018
url https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84963976875&origin=inward
http://cmuir.cmu.ac.th/jspui/handle/6653943832/55420
_version_ 1681424502421979136

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