Electrical properties of field-effect transistor with interlinked ZnO tetrapod network as an active layer

• Main Authors: Witawat Ponhan, Meechai Thepnurat, Surachet Phadungdhitidhada, Duangmanee Wongratanaphisan, Supab Choopun
• Format: Journal
• Published: 2018
• Subjects: Chemistry; Materials Science; Physics and Astronomy
• Online Access: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84963976875&origin=inward; http://cmuir.cmu.ac.th/jspui/handle/6653943832/55420
• Institution: Chiang Mai University

© 2016 Elsevier B.V. In this work, we have investigated the thin film based field-effect transistor (FET) with interlinked ZnO tetrapod network (ITN-ZnO) used as an active channel layer. The ITN-ZnOs were synthesized by microwave assisted thermal oxidation technique. A ZnO FET with bottom gate struc...