Electrical properties of field-effect transistor with interlinked ZnO tetrapod network as an active layer
© 2016 Elsevier B.V. In this work, we have investigated the thin film based field-effect transistor (FET) with interlinked ZnO tetrapod network (ITN-ZnO) used as an active channel layer. The ITN-ZnOs were synthesized by microwave assisted thermal oxidation technique. A ZnO FET with bottom gate struc...
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th-cmuir.6653943832-554202018-09-05T03:13:04Z Electrical properties of field-effect transistor with interlinked ZnO tetrapod network as an active layer Witawat Ponhan Meechai Thepnurat Surachet Phadungdhitidhada Duangmanee Wongratanaphisan Supab Choopun Chemistry Materials Science Physics and Astronomy © 2016 Elsevier B.V. In this work, we have investigated the thin film based field-effect transistor (FET) with interlinked ZnO tetrapod network (ITN-ZnO) used as an active channel layer. The ITN-ZnOs were synthesized by microwave assisted thermal oxidation technique. A ZnO FET with bottom gate structure was fabricated and investigated in terms of electrical properties. X-ray diffraction pattern revealed the wurtzite hexagonal structure of the ITN-ZnO. A drain current on/off ratio of 104, the off-state current as low as 10 nA, the threshold voltage of 10 V, field effect mobility of 7.939 cm2/Vs and sub-threshold swing of 1.4 V/decade were obtained. These results suggested that ITN-ZnO could be applied for FET, which could be operated in an enhancement mode. 2018-09-05T02:55:34Z 2018-09-05T02:55:34Z 2016-11-25 Journal 02578972 2-s2.0-84963976875 10.1016/j.surfcoat.2016.04.022 https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84963976875&origin=inward http://cmuir.cmu.ac.th/jspui/handle/6653943832/55420 |
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Chiang Mai University |
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Chemistry Materials Science Physics and Astronomy |
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Chemistry Materials Science Physics and Astronomy Witawat Ponhan Meechai Thepnurat Surachet Phadungdhitidhada Duangmanee Wongratanaphisan Supab Choopun Electrical properties of field-effect transistor with interlinked ZnO tetrapod network as an active layer |
| description |
© 2016 Elsevier B.V. In this work, we have investigated the thin film based field-effect transistor (FET) with interlinked ZnO tetrapod network (ITN-ZnO) used as an active channel layer. The ITN-ZnOs were synthesized by microwave assisted thermal oxidation technique. A ZnO FET with bottom gate structure was fabricated and investigated in terms of electrical properties. X-ray diffraction pattern revealed the wurtzite hexagonal structure of the ITN-ZnO. A drain current on/off ratio of 104, the off-state current as low as 10 nA, the threshold voltage of 10 V, field effect mobility of 7.939 cm2/Vs and sub-threshold swing of 1.4 V/decade were obtained. These results suggested that ITN-ZnO could be applied for FET, which could be operated in an enhancement mode. |
| format |
Journal |
| author |
Witawat Ponhan Meechai Thepnurat Surachet Phadungdhitidhada Duangmanee Wongratanaphisan Supab Choopun |
| author_facet |
Witawat Ponhan Meechai Thepnurat Surachet Phadungdhitidhada Duangmanee Wongratanaphisan Supab Choopun |
| author_sort |
Witawat Ponhan |
| title |
Electrical properties of field-effect transistor with interlinked ZnO tetrapod network as an active layer |
| title_short |
Electrical properties of field-effect transistor with interlinked ZnO tetrapod network as an active layer |
| title_full |
Electrical properties of field-effect transistor with interlinked ZnO tetrapod network as an active layer |
| title_fullStr |
Electrical properties of field-effect transistor with interlinked ZnO tetrapod network as an active layer |
| title_full_unstemmed |
Electrical properties of field-effect transistor with interlinked ZnO tetrapod network as an active layer |
| title_sort |
electrical properties of field-effect transistor with interlinked zno tetrapod network as an active layer |
| publishDate |
2018 |
| url |
https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84963976875&origin=inward http://cmuir.cmu.ac.th/jspui/handle/6653943832/55420 |
| _version_ |
1681424502421979136 |