Thermoelectric properties of phosphorus-doped indium tellurosilicate: InSiTe<inf>3</inf>

© 2017 Elsevier B.V. Polycrystalline samples of undoped and doped indium tellurosilicate: InSiTe3were synthesized and their thermoelectric (TE) properties were investigated in the temperature range from 323 to 723 K. Phosphorus (P) was selected as an electron dopant, i.e., the starting compositions...

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Bibliographic Details
Main Authors: Tawat Suriwong, Ken Kurosaki, Somchai Thongtem
Format: Journal
Published: 2018
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Online Access:https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85033573264&origin=inward
http://cmuir.cmu.ac.th/jspui/handle/6653943832/58682
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Institution: Chiang Mai University

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