Schottky barrier height engineering of ti/n-type silicon diode by means of ion implantation

• المؤلفون الرئيسيون: Doldet Tantraviwat, Wittawat Yamwong, Udom Techakijkajorn, Kazuo Imai, Burapat Inceesungvorn
• التنسيق: دورية
• منشور في: 2018
• الموضوعات: Multidisciplinary
• الوصول للمادة أونلاين: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85052384085&origin=inward; http://cmuir.cmu.ac.th/jspui/handle/6653943832/59194
• المؤسسة: Chiang Mai University

© 2018, Walailak University. All rights reserved. Herein, boron implantation technique was employed to engineer the Schottky barrier height (SBH) of Ti/n-type silicon junction (Ti/n-Si). The Ti/n-Si Schottky diodes with boron doses of 4, 5.4 and 6.6×1012cm-2at the energy of 25 keV were fabricated wi...