Thermal change of amorphous indium tin oxide films sputter-deposited in water vapor atmosphere

Thermal change of amorphous indium tin oxide films sputter-deposited in water vapor atmosphere

Amorphous ITO thin films were deposited on silicon wafers at room temperature by RF + DC magnetron sputtering at water vapor partial pressures between 0 and 6 × 10- 5 Torr. The O/(In + Sn) ratio was determined by Rutherford backscattering spectroscopy. The effect of water vapor on the thermal crysta...

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Bibliographic Details
Main Authors: M. H. Wang, Y. Onai, Y. Hoshi, H. Lei, T. Kondo, T. Uchida, S. Singkarat, T. Kamwanna, S. Dangtip, S. Aukkaravittayapun, T. Nishide, S. Tokiwa, Y. Sawada
Format: Journal
Published: 2018
Subjects:
Materials Science
Physics and Astronomy
Online Access:https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=44349178249&origin=inward
http://cmuir.cmu.ac.th/jspui/handle/6653943832/60510
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Institution: Chiang Mai University

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https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=44349178249&origin=inward
http://cmuir.cmu.ac.th/jspui/handle/6653943832/60510

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