MeV-ion beam analysis of the interface between filtered cathodic arc-deposited a-carbon and single crystalline silicon

MeV-ion beam analysis of the interface between filtered cathodic arc-deposited a-carbon and single crystalline silicon

Amorphous carbon (a-C) films were deposited on Si(1 0 0) wafers by a filtered cathodic vacuum arc (FCVA) plasma source. A negative electrical bias was applied to the silicon substrate in order to control the incident energy of carbon ions. Effects of the electrical bias on the a-C/Si interface chara...

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Main Authors: T. Kamwanna, N. Pasaja, L. D. Yu, T. Vilaithong, A. Anders, S. Singkarat
Format: Journal
Published: 2018
Subjects:
Physics and Astronomy
Online Access:https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=56949104178&origin=inward
http://cmuir.cmu.ac.th/jspui/handle/6653943832/60722
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Institution: Chiang Mai University
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spelling th-cmuir.6653943832-607222018-09-10T03:48:05Z MeV-ion beam analysis of the interface between filtered cathodic arc-deposited a-carbon and single crystalline silicon T. Kamwanna N. Pasaja L. D. Yu T. Vilaithong A. Anders S. Singkarat Physics and Astronomy Amorphous carbon (a-C) films were deposited on Si(1 0 0) wafers by a filtered cathodic vacuum arc (FCVA) plasma source. A negative electrical bias was applied to the silicon substrate in order to control the incident energy of carbon ions. Effects of the electrical bias on the a-C/Si interface characteristics were investigated by using standard Rutherford backscattering spectrometry (RBS) in the channeling mode with 2.1-MeV He2 +ions. The shape of the Si surface peaks of the RBS/channeling spectra reflects the degree of interface disorder due to atomic displacement from the bulk position of the Si crystal. Details of the analysis method developed are described. It was found that the width of the a-C/Si interface increases linearly with the substrate bias voltage but not the thickness of the a-C film. © 2008 Elsevier B.V. 2018-09-10T03:48:05Z 2018-09-10T03:48:05Z 2008-12-01 Journal 0168583X 2-s2.0-56949104178 10.1016/j.nimb.2008.09.013 https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=56949104178&origin=inward http://cmuir.cmu.ac.th/jspui/handle/6653943832/60722
institution Chiang Mai University
building Chiang Mai University Library
country Thailand
collection CMU Intellectual Repository
topic Physics and Astronomy
spellingShingle Physics and Astronomy
T. Kamwanna
N. Pasaja
L. D. Yu
T. Vilaithong
A. Anders
S. Singkarat
MeV-ion beam analysis of the interface between filtered cathodic arc-deposited a-carbon and single crystalline silicon
description Amorphous carbon (a-C) films were deposited on Si(1 0 0) wafers by a filtered cathodic vacuum arc (FCVA) plasma source. A negative electrical bias was applied to the silicon substrate in order to control the incident energy of carbon ions. Effects of the electrical bias on the a-C/Si interface characteristics were investigated by using standard Rutherford backscattering spectrometry (RBS) in the channeling mode with 2.1-MeV He2 +ions. The shape of the Si surface peaks of the RBS/channeling spectra reflects the degree of interface disorder due to atomic displacement from the bulk position of the Si crystal. Details of the analysis method developed are described. It was found that the width of the a-C/Si interface increases linearly with the substrate bias voltage but not the thickness of the a-C film. © 2008 Elsevier B.V.
format Journal
author T. Kamwanna
N. Pasaja
L. D. Yu
T. Vilaithong
A. Anders
S. Singkarat
author_facet T. Kamwanna
N. Pasaja
L. D. Yu
T. Vilaithong
A. Anders
S. Singkarat
author_sort T. Kamwanna
title MeV-ion beam analysis of the interface between filtered cathodic arc-deposited a-carbon and single crystalline silicon
title_short MeV-ion beam analysis of the interface between filtered cathodic arc-deposited a-carbon and single crystalline silicon
title_full MeV-ion beam analysis of the interface between filtered cathodic arc-deposited a-carbon and single crystalline silicon
title_fullStr MeV-ion beam analysis of the interface between filtered cathodic arc-deposited a-carbon and single crystalline silicon
title_full_unstemmed MeV-ion beam analysis of the interface between filtered cathodic arc-deposited a-carbon and single crystalline silicon
title_sort mev-ion beam analysis of the interface between filtered cathodic arc-deposited a-carbon and single crystalline silicon
publishDate 2018
url https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=56949104178&origin=inward
http://cmuir.cmu.ac.th/jspui/handle/6653943832/60722
_version_ 1681425488330883072

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