Transition in (001) AlGaAs/AlAs/GaAs double-barrier quantum structure for infrared photodetection

Optical transitions for the (001) Al0.3Ga0.7As/AlAs/GaAs double-barrier superlattices are evaluated by a semiempirical, tight-binding calculation. The oscillator strength between the hole and electron states confined in either Γ- or X-like well are investigated as a function of AlAs slab thickness....

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Main Authors: T. Osotchan, V. W.L. Chin, T. L. Tansley
其他作者: Macquarie University
格式: Article
出版: 2018
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在線閱讀:https://repository.li.mahidol.ac.th/handle/123456789/17838
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機構: Mahidol University