Effect of ion depth in low energy ion scattering Spectroscopy for evaluating nanostructures
In order to investigate the nanostructures, the spectroscopy technique providing the information on the top most layers or a few nanometer below the surface is required and the effect of ion depth in low energy ion scattering (LEIS) spectroscopy was investigated by Monte Carlo simulation. Helium ion...
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th-mahidol.243962018-08-24T08:49:19Z Effect of ion depth in low energy ion scattering Spectroscopy for evaluating nanostructures Surachai Pengmanayol Tanakom Osotchan Mahidol University Computer Science Engineering In order to investigate the nanostructures, the spectroscopy technique providing the information on the top most layers or a few nanometer below the surface is required and the effect of ion depth in low energy ion scattering (LEIS) spectroscopy was investigated by Monte Carlo simulation. Helium ions with the energy of 0.1, 1.0 and 10.0 keV were used as a probe ion in the simulation on the pure element target with atomic number from 3 to 92. The depths which ions can scattering out of the surface and the position just before the scattering of the surface were collected. These are used to indicate the region where the surface information can be gathered in the multiple scattering ions. For 1.0 keV ion, the typical depth for LEIS is only 10 nm from the surface, which is suitable in characterization of nanostructures. The ion penetration depth was also evaluated by collecting the depth of terminated ion inside the target. This indicates the influence of ion into the nanostructure target at this thickness. © 2007 IEEE. 2018-08-24T01:48:05Z 2018-08-24T01:48:05Z 2007-08-28 Conference Paper Proceedings of the 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2007. (2007), 838-841 10.1109/NEMS.2007.352148 2-s2.0-34548140519 https://repository.li.mahidol.ac.th/handle/123456789/24396 Mahidol University SCOPUS https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=34548140519&origin=inward |
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Computer Science Engineering Surachai Pengmanayol Tanakom Osotchan Effect of ion depth in low energy ion scattering Spectroscopy for evaluating nanostructures |
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In order to investigate the nanostructures, the spectroscopy technique providing the information on the top most layers or a few nanometer below the surface is required and the effect of ion depth in low energy ion scattering (LEIS) spectroscopy was investigated by Monte Carlo simulation. Helium ions with the energy of 0.1, 1.0 and 10.0 keV were used as a probe ion in the simulation on the pure element target with atomic number from 3 to 92. The depths which ions can scattering out of the surface and the position just before the scattering of the surface were collected. These are used to indicate the region where the surface information can be gathered in the multiple scattering ions. For 1.0 keV ion, the typical depth for LEIS is only 10 nm from the surface, which is suitable in characterization of nanostructures. The ion penetration depth was also evaluated by collecting the depth of terminated ion inside the target. This indicates the influence of ion into the nanostructure target at this thickness. © 2007 IEEE. |
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Mahidol University |
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Mahidol University Surachai Pengmanayol Tanakom Osotchan |
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Conference or Workshop Item |
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Surachai Pengmanayol Tanakom Osotchan |
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Surachai Pengmanayol |
title |
Effect of ion depth in low energy ion scattering Spectroscopy for evaluating nanostructures |
title_short |
Effect of ion depth in low energy ion scattering Spectroscopy for evaluating nanostructures |
title_full |
Effect of ion depth in low energy ion scattering Spectroscopy for evaluating nanostructures |
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Effect of ion depth in low energy ion scattering Spectroscopy for evaluating nanostructures |
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Effect of ion depth in low energy ion scattering Spectroscopy for evaluating nanostructures |
title_sort |
effect of ion depth in low energy ion scattering spectroscopy for evaluating nanostructures |
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2018 |
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https://repository.li.mahidol.ac.th/handle/123456789/24396 |
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