Application of taguchi method with the interaction test for lower DIBL IN WSix/TiO2 channel vertical double gate NMOS

by Kaharudin, K.E., Salehuddin, F., Zain, A.S.M., Aziz, M.N.I.A., Ahmad, I.
Published 2017

Taguchi modeling of process parameters in vdg-mosfet device for higher ION/IOFF ratio

by Kaharudin, K.E., Salehuddin, F., Hamidon, A.H., Aziz, M.N.I.A., Ahmad, I.
Published 2017

Application of taguchi method with the interaction test for lower DIBL IN WSix/TiO2 channel vertical double gate NMOS

by Kaharudin K.E., Salehuddin F., Zain A.S.M., Aziz M.N.I.A., Ahmad I.
Published 2023

Taguchi modeling of process parameters in vdg-mosfet device for higher ION/IOFF ratio

by Kaharudin K.E., Salehuddin F., Hamidon A.H., Aziz M.N.I.A., Ahmad I.
Published 2023

Variability analysis of process parameters on subthreshold swing in vertical DG-MOSFET device

by Kaharudin, K.E., Salehuddin, F., Hamidon, A.H., Zain, A., Abd Aziz, M.N.I., Ahmad, I.
Published 2017

Electrical characterization of different high-k dielectrics with tungsten silicide in vertical double gate nmos structure

by Kaharudin, K.E., Salehuddin, F., Soin, N., Zain, A.S.M., Aziz, M.N.I.A., Ahmad, I.
Published 2017

Electrical characterization of different high-k dielectrics with tungsten silicide in vertical double gate nmos structure

by Kaharudin K.E., Salehuddin F., Soin N., Zain A.S.M., Aziz M.N.I.A., Ahmad I.
Published 2023

Variability analysis of process parameters on subthreshold swing in vertical DG-MOSFET device

by Kaharudin K.E., Salehuddin F., Hamidon A.H., Zain A., Abd Aziz M.N.I., Ahmad I.
Published 2023

Electron Mobility Sensor Scheme-Based on a Mach-Zehnder Interferometer Approach

by Pornsuwancharoen, N., Youplao, Phichai, Amiri, Iraj Sadegh, Aziz, M. S. I., Ali, Jalil, Singh, G., Yupapin, P., Koledov, Victor V., Grattan, Kenneth T. V.
Published 2018