RF CMOS 0.18 micrometer parameterized layout generation kit

by Chan, Kwok Wai.
Published 2008

Physical layout design optimization of integrated spiral inductors for silicon-based RFIC applications

by Sia, Choon Beng, Ong, Beng Hwee, Chan, Kwok Wai, Yeo, Kiat Seng, Ma, Jianguo, Do, Manh Anh
Published 2009

AlGaN/GaN-on-silicon metal–oxide–semiconductor high-electron-mobility transistor with breakdown voltage of 800 V and on-state resistance of 3 mΩ·cm2 using a complementary metal–oxi...

by Yeo, Yee-Chia, Liu, Xinke, Zhan, Chunlei, Chan, Kwok Wai, Liu, Wei, Tan, Leng Seow, Chen, Kevin Jing
Published 2013

AlGaN/GaN metal–oxide–semiconductor high-electron-mobility transistors with a high breakdown voltage of 1400 V and a complementary metal–oxide–semiconductor compatible gold-free pr...

by Liu, Xinke, Zhan, Chunlei, Chan, Kwok Wai, Owen, Man Hon Samuel, Liu, Wei, Chi, Dong Zhi, Tan, Leng Seow, Chen, Kevin Jing, Yeo, Yee-Chia
Published 2013