Effect of growth temperature on the epitaxy strain relaxation and the tilt of InxAl1−x as graded layer grown by solid-source molecular beam epitaxy

by Loke, Wan Khai, Tan, Kian Hua, Wicaksono, Satrio, Yoon, Soon Fatt, Owen, Man Hon Samuel, Yeo, Yee-Chia
Published 2013

N-channel InGaAs field-effect transistors formed on germanium-on-insulator substrates

by Ivana, Subramanian, Sujith, Owen, Man Hon Samuel, Tan, Kian Hua, Loke, Wan Khai, Wicaksono, Satrio, Yoon, Soon Fatt, Yeo, Yee-Chia
Published 2013

AlGaN/GaN metal–oxide–semiconductor high-electron-mobility transistors with a high breakdown voltage of 1400 V and a complementary metal–oxide–semiconductor compatible gold-free pr...

by Liu, Xinke, Zhan, Chunlei, Chan, Kwok Wai, Owen, Man Hon Samuel, Liu, Wei, Chi, Dong Zhi, Tan, Leng Seow, Chen, Kevin Jing, Yeo, Yee-Chia
Published 2013