Infrared spectroscopic ellipsometry study of sulfur-doped In0.53Ga0.47As ultra-shallow junctions

by Richard D'Costa, Vijay, Subramanian, Sujith, Li, Daosheng, Wicaksono, Satrio, Yoon, Soon Fatt, Tok, Eng Soon, Yeo, Yee-Chia
Published 2014

N-channel InGaAs field-effect transistors formed on germanium-on-insulator substrates

by Ivana, Subramanian, Sujith, Owen, Man Hon Samuel, Tan, Kian Hua, Loke, Wan Khai, Wicaksono, Satrio, Yoon, Soon Fatt, Yeo, Yee-Chia
Published 2013