Activation of beryllium-implanted GaN by two-step annealing

by Sun, Yuejun, Tan, Leng Seow, Chua, Soo Jin, Prakash, Savarimuthu
Published 2014

Numerical simulation of backgating suppression in high electron mobility transistors (HEMTs) with a low temperature molecular beam epitaxy (MBE)-grown gallium arsenide buffer layer...

by Tan, Leng Seow, Lau, Wai Shing, Samudra, Ganesh Shankar, Lee, Kin Man, Ang, Boon Yong
Published 2014

Characterization of traps in semi-insulating gallium arsenide buffer layers grown at low temperature by molecular beam epitaxy with an improved zero-bias thermally stimurated curre...

by Lau, Wai Shing, Chong, Tow Chong, Tan, Leng Seow, Goo, Chuen Hang, Goh, Kian Seng
Published 2014

Numerical simulation of backgating suppression in high electron mobility transistors (HEMTs) with a low temperature molecular beam epitaxy (MBE)-grown gallium arsenide buffer layer...

by Tan, Leng Seow, Lau, Wai Shing, Samudra, Ganesh Shankar, Lee, Kin Man, Ang, Boon Yong
Published 2014

AlGaN/GaN-on-silicon metal–oxide–semiconductor high-electron-mobility transistor with breakdown voltage of 800 V and on-state resistance of 3 mΩ·cm2 using a complementary metal–oxi...

by Yeo, Yee-Chia, Liu, Xinke, Zhan, Chunlei, Chan, Kwok Wai, Liu, Wei, Tan, Leng Seow, Chen, Kevin Jing
Published 2013

Band alignment of HfAlO/GaN (0001) determined by X-ray photoelectron spectroscopy : effect of in situ SiH4 passivation

by Liu, Xinke, Liu, Zhihong, Pannirselvam, Somasuntharam, Pan, Jishen, Liu, Wei, Jia, Fang, Lu, Youming, Liu, Chang, Yu, Wenjie, He, Jin, Tan, Leng Seow
Published 2015

AlGaN/GaN metal–oxide–semiconductor high-electron-mobility transistors with a high breakdown voltage of 1400 V and a complementary metal–oxide–semiconductor compatible gold-free pr...

by Liu, Xinke, Zhan, Chunlei, Chan, Kwok Wai, Owen, Man Hon Samuel, Liu, Wei, Chi, Dong Zhi, Tan, Leng Seow, Chen, Kevin Jing, Yeo, Yee-Chia
Published 2013