Power MOSFET having enhanced breakdown voltage

by LIANG, YUNG CHII, SAMUDRA, GANESH SHANKAR, GAN, KIAN PAAU, YANG, XIN
Published 2012

Numerical simulation of backgating suppression in high electron mobility transistors (HEMTs) with a low temperature molecular beam epitaxy (MBE)-grown gallium arsenide buffer layer...

by Tan, Leng Seow, Lau, Wai Shing, Samudra, Ganesh Shankar, Lee, Kin Man, Ang, Boon Yong
Published 2014

Process flow for a performance enhanced MOSFET with self-aligned, recessed channel

by SNEELAL, SNEEDHARAN PILLAI, POH, FRANCIS, LEE, JAMES, SEE, ALEX, LAU, C. K., SAMUDRA, GANESH SHANKAR
Published 2012

Numerical simulation of backgating suppression in high electron mobility transistors (HEMTs) with a low temperature molecular beam epitaxy (MBE)-grown gallium arsenide buffer layer...

by Tan, Leng Seow, Lau, Wai Shing, Samudra, Ganesh Shankar, Lee, Kin Man, Ang, Boon Yong
Published 2014

Process flow for a performance enhanced MOSFET with self-aligned, recessed channel

by SNEELAL, SNEEDHARAN PILLAI, POH, FRANCIS YOUG WEE, LEE, JAMES YONG MENG, SEE, ALEX, LAU, C. K., SAMUDRA, GANESH SHANKAR
Published 2012