Power MOSFET having enhanced breakdown voltage

Power MOSFET having enhanced breakdown voltage

US6853033

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Bibliographic Details
Main Authors: LIANG, YUNG CHII, SAMUDRA, GANESH SHANKAR, GAN, KIAN PAAU, YANG, XIN
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Patent
Published: 2012
Online Access:http://scholarbank.nus.edu.sg/handle/10635/32689
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/32689

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