Power MOSFET having enhanced breakdown voltage

US6853033

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Bibliographic Details
Main Authors:	LIANG, YUNG CHII, SAMUDRA, GANESH SHANKAR, GAN, KIAN PAAU, YANG, XIN
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Patent
Published:	2012
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/32689
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Institution:	National University of Singapore

Description
Summary:	US6853033

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