Power MOSFET having enhanced breakdown voltage

US6853033

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Bibliographic Details
Main Authors: LIANG, YUNG CHII, SAMUDRA, GANESH SHANKAR, GAN, KIAN PAAU, YANG, XIN
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Patent
Published: 2012
Online Access:http://scholarbank.nus.edu.sg/handle/10635/32689
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Institution: National University of Singapore
id sg-nus-scholar.10635-32689
record_format dspace
spelling sg-nus-scholar.10635-326892015-07-29T07:03:52Z Power MOSFET having enhanced breakdown voltage LIANG, YUNG CHII SAMUDRA, GANESH SHANKAR GAN, KIAN PAAU YANG, XIN ELECTRICAL & COMPUTER ENGINEERING NATIONAL UNIVERSITY OF SINGAPORE US6853033 Granted Patent 2012-05-02T02:28:55Z 2012-05-02T02:28:55Z 2005-02-08 Patent LIANG, YUNG CHII,SAMUDRA, GANESH SHANKAR,GAN, KIAN PAAU,YANG, XIN (2005-02-08). Power MOSFET having enhanced breakdown voltage. ScholarBank@NUS Repository. http://scholarbank.nus.edu.sg/handle/10635/32689 NOT_IN_WOS PatSnap
institution National University of Singapore
building NUS Library
country Singapore
collection ScholarBank@NUS
description US6853033
author2 ELECTRICAL & COMPUTER ENGINEERING
author_facet ELECTRICAL & COMPUTER ENGINEERING
LIANG, YUNG CHII
SAMUDRA, GANESH SHANKAR
GAN, KIAN PAAU
YANG, XIN
format Patent
author LIANG, YUNG CHII
SAMUDRA, GANESH SHANKAR
GAN, KIAN PAAU
YANG, XIN
spellingShingle LIANG, YUNG CHII
SAMUDRA, GANESH SHANKAR
GAN, KIAN PAAU
YANG, XIN
Power MOSFET having enhanced breakdown voltage
author_sort LIANG, YUNG CHII
title Power MOSFET having enhanced breakdown voltage
title_short Power MOSFET having enhanced breakdown voltage
title_full Power MOSFET having enhanced breakdown voltage
title_fullStr Power MOSFET having enhanced breakdown voltage
title_full_unstemmed Power MOSFET having enhanced breakdown voltage
title_sort power mosfet having enhanced breakdown voltage
publishDate 2012
url http://scholarbank.nus.edu.sg/handle/10635/32689
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