Power MOSFET having enhanced breakdown voltage
US6853033
Saved in:
Main Authors: | , , , |
---|---|
Other Authors: | |
Format: | Patent |
Published: |
2012
|
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/32689 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
id |
sg-nus-scholar.10635-32689 |
---|---|
record_format |
dspace |
spelling |
sg-nus-scholar.10635-326892015-07-29T07:03:52Z Power MOSFET having enhanced breakdown voltage LIANG, YUNG CHII SAMUDRA, GANESH SHANKAR GAN, KIAN PAAU YANG, XIN ELECTRICAL & COMPUTER ENGINEERING NATIONAL UNIVERSITY OF SINGAPORE US6853033 Granted Patent 2012-05-02T02:28:55Z 2012-05-02T02:28:55Z 2005-02-08 Patent LIANG, YUNG CHII,SAMUDRA, GANESH SHANKAR,GAN, KIAN PAAU,YANG, XIN (2005-02-08). Power MOSFET having enhanced breakdown voltage. ScholarBank@NUS Repository. http://scholarbank.nus.edu.sg/handle/10635/32689 NOT_IN_WOS PatSnap |
institution |
National University of Singapore |
building |
NUS Library |
country |
Singapore |
collection |
ScholarBank@NUS |
description |
US6853033 |
author2 |
ELECTRICAL & COMPUTER ENGINEERING |
author_facet |
ELECTRICAL & COMPUTER ENGINEERING LIANG, YUNG CHII SAMUDRA, GANESH SHANKAR GAN, KIAN PAAU YANG, XIN |
format |
Patent |
author |
LIANG, YUNG CHII SAMUDRA, GANESH SHANKAR GAN, KIAN PAAU YANG, XIN |
spellingShingle |
LIANG, YUNG CHII SAMUDRA, GANESH SHANKAR GAN, KIAN PAAU YANG, XIN Power MOSFET having enhanced breakdown voltage |
author_sort |
LIANG, YUNG CHII |
title |
Power MOSFET having enhanced breakdown voltage |
title_short |
Power MOSFET having enhanced breakdown voltage |
title_full |
Power MOSFET having enhanced breakdown voltage |
title_fullStr |
Power MOSFET having enhanced breakdown voltage |
title_full_unstemmed |
Power MOSFET having enhanced breakdown voltage |
title_sort |
power mosfet having enhanced breakdown voltage |
publishDate |
2012 |
url |
http://scholarbank.nus.edu.sg/handle/10635/32689 |
_version_ |
1681081269014757376 |