Process flow for a performance enhanced MOSFET with self-aligned, recessed channel

Process flow for a performance enhanced MOSFET with self-aligned, recessed channel

US6391720

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Bibliographic Details
Main Authors: SNEELAL, SNEEDHARAN PILLAI, POH, FRANCIS YOUG WEE, LEE, JAMES YONG MENG, SEE, ALEX, LAU, C. K., SAMUDRA, GANESH SHANKAR
Other Authors: PHYSICS
Format: Patent
Published: 2012
Online Access:http://scholarbank.nus.edu.sg/handle/10635/32609
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/32609

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