Process flow for a performance enhanced MOSFET with self-aligned, recessed channel

US6391720

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Bibliographic Details
Main Authors:	SNEELAL, SNEEDHARAN PILLAI, POH, FRANCIS YOUG WEE, LEE, JAMES YONG MENG, SEE, ALEX, LAU, C. K., SAMUDRA, GANESH SHANKAR
Other Authors:	PHYSICS
Format:	Patent
Published:	2012
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/32609
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Institution:	National University of Singapore

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Summary:	US6391720

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