A Study of compressively strained Si0.5Ge0.5 metal-oxide-semiconductor capacitors with chemical vapor deposition HfAlO as gate dielectric

by Huang, J., Fu, J., Zhu, C., Tay, A.A.O., Cheng, Z.-Y., Leitz, C.W., Lochtefeld, A.
Published 2014

Surface NH 3 anneal on strained Si 0.5Ge 0.5 for metal-oxide-semiconductor applications with HfO 2 as gate dielectric

by Huang, J., Wu, N., Zhang, Q., Zhu, C., Li, M.F., Tay, A.A.O., Cheng, Z.-Y., Leitz, C.W., Lochtefeld, A.
Published 2014

Investigation of electrical properties of furnace grown gate oxide on strained-Si

by Bera, L.K., Mathew, S., Balasubramanian, N., Leitz, C., Braithwaite, G., Singaporewala, F., Yap, J., Carlin, J., Langdo, T., Lochtefeld, T., Currie, M., Hammond, R., Fiorenza, J., Badawi, H., Bulsara, M.
Published 2014