Surface NH 3 anneal on strained Si 0.5Ge 0.5 for metal-oxide-semiconductor applications with HfO 2 as gate dielectric

Surface NH 3 anneal on strained Si 0.5Ge 0.5 for metal-oxide-semiconductor applications with HfO 2 as gate dielectric

10.1063/1.2191468

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Bibliographic Details
Main Authors: Huang, J., Wu, N., Zhang, Q., Zhu, C., Li, M.F., Tay, A.A.O., Cheng, Z.-Y., Leitz, C.W., Lochtefeld, A.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83124
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/83124

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