Surface NH 3 anneal on strained Si 0.5Ge 0.5 for metal-oxide-semiconductor applications with HfO 2 as gate dielectric

10.1063/1.2191468

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Main Authors:	Huang, J., Wu, N., Zhang, Q., Zhu, C., Li, M.F., Tay, A.A.O., Cheng, Z.-Y., Leitz, C.W., Lochtefeld, A.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83124
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-83124
record_format	dspace
spelling	sg-nus-scholar.10635-831242023-10-29T20:23:47Z Surface NH 3 anneal on strained Si 0.5Ge 0.5 for metal-oxide-semiconductor applications with HfO 2 as gate dielectric Huang, J. Wu, N. Zhang, Q. Zhu, C. Li, M.F. Tay, A.A.O. Cheng, Z.-Y. Leitz, C.W. Lochtefeld, A. ELECTRICAL & COMPUTER ENGINEERING MECHANICAL ENGINEERING 10.1063/1.2191468 Applied Physics Letters 88 14 - APPLA 2014-10-07T04:37:33Z 2014-10-07T04:37:33Z 2006-04-03 Article Huang, J., Wu, N., Zhang, Q., Zhu, C., Li, M.F., Tay, A.A.O., Cheng, Z.-Y., Leitz, C.W., Lochtefeld, A. (2006-04-03). Surface NH 3 anneal on strained Si 0.5Ge 0.5 for metal-oxide-semiconductor applications with HfO 2 as gate dielectric. Applied Physics Letters 88 (14) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2191468 00036951 http://scholarbank.nus.edu.sg/handle/10635/83124 000236612000108 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1063/1.2191468
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Huang, J. Wu, N. Zhang, Q. Zhu, C. Li, M.F. Tay, A.A.O. Cheng, Z.-Y. Leitz, C.W. Lochtefeld, A.
format	Article
author	Huang, J. Wu, N. Zhang, Q. Zhu, C. Li, M.F. Tay, A.A.O. Cheng, Z.-Y. Leitz, C.W. Lochtefeld, A.
spellingShingle	Huang, J. Wu, N. Zhang, Q. Zhu, C. Li, M.F. Tay, A.A.O. Cheng, Z.-Y. Leitz, C.W. Lochtefeld, A. Surface NH 3 anneal on strained Si 0.5Ge 0.5 for metal-oxide-semiconductor applications with HfO 2 as gate dielectric
author_sort	Huang, J.
title	Surface NH 3 anneal on strained Si 0.5Ge 0.5 for metal-oxide-semiconductor applications with HfO 2 as gate dielectric
title_short	Surface NH 3 anneal on strained Si 0.5Ge 0.5 for metal-oxide-semiconductor applications with HfO 2 as gate dielectric
title_full	Surface NH 3 anneal on strained Si 0.5Ge 0.5 for metal-oxide-semiconductor applications with HfO 2 as gate dielectric
title_fullStr	Surface NH 3 anneal on strained Si 0.5Ge 0.5 for metal-oxide-semiconductor applications with HfO 2 as gate dielectric
title_full_unstemmed	Surface NH 3 anneal on strained Si 0.5Ge 0.5 for metal-oxide-semiconductor applications with HfO 2 as gate dielectric
title_sort	surface nh 3 anneal on strained si 0.5ge 0.5 for metal-oxide-semiconductor applications with hfo 2 as gate dielectric
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/83124
_version_	1781784308252409856

Surface NH 3 anneal on strained Si 0.5Ge 0.5 for metal-oxide-semiconductor applications with HfO 2 as gate dielectric

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