Surface NH 3 anneal on strained Si 0.5Ge 0.5 for metal-oxide-semiconductor applications with HfO 2 as gate dielectric
10.1063/1.2191468
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Main Authors: | , , , , , , , , |
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Other Authors: | |
Format: | Article |
Published: |
2014
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Online Access: | http://scholarbank.nus.edu.sg/handle/10635/83124 |
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Institution: | National University of Singapore |
Summary: | 10.1063/1.2191468 |
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