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Qian, P.W.
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Qian, P.W.
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Qian, P.W.
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Defect states responsible for leakage current in Ta2O5 films on Si due to Si contamination from the substrate
by
Lau, W.S.
,
Khaw, K.K.
,
Qian
,
P.W
.
,
Sandler, N.P.
,
Chu, P.K.
Published 2014
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2
A comparison of defect states in tantalum pentoxide (Ta2O5) films after rapid thermal annealing in O2 or N2O by zero-bias thermally stimulated current spectroscopy
by
Lau, W.S.
,
Khaw, K.K.
,
Qian
,
P.W
.
,
Sandler, N.P.
,
Chu, P.K.
Published 2014
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3
Evidence that N2O is a stronger oxidizing agent than O2 for the post-deposition annealing of Ta2O5 on Si capacitors
by
Lau, W.S.
,
Qian
,
P.W
.
,
Sandler, N.P.
,
McKinley, K.A.
,
Chu, P.K.
Published 2014
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