A comparison of defect states in tantalum pentoxide (Ta2O5) films after rapid thermal annealing in O2 or N2O by zero-bias thermally stimulated current spectroscopy

A comparison of defect states in tantalum pentoxide (Ta2O5) films after rapid thermal annealing in O2 or N2O by zero-bias thermally stimulated current spectroscopy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

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Bibliographic Details
Main Authors: Lau, W.S., Khaw, K.K., Qian, P.W., Sandler, N.P., Chu, P.K.
Other Authors: ELECTRICAL ENGINEERING
Format: Review
Published: 2014
Subjects:
Chemical vapor deposition (CVD)
Defect states
Leakage current
Nitrous oxide (N2O)
Oxygen
Rapid thermal annealing (RTA)
Tantalum pentoxide (Ta2O5)
Thermally stimulated currrent (TSC)
Traps
Online Access:http://scholarbank.nus.edu.sg/handle/10635/81813
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/81813

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