A comparison of defect states in tantalum pentoxide (Ta2O5) films after rapid thermal annealing in O2 or N2O by zero-bias thermally stimulated current spectroscopy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

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Main Authors: Lau, W.S., Khaw, K.K., Qian, P.W., Sandler, N.P., Chu, P.K.
Other Authors: ELECTRICAL ENGINEERING
Format: Review
Published: 2014
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Online Access:http://scholarbank.nus.edu.sg/handle/10635/81813
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spelling sg-nus-scholar.10635-818132015-01-06T22:27:18Z A comparison of defect states in tantalum pentoxide (Ta2O5) films after rapid thermal annealing in O2 or N2O by zero-bias thermally stimulated current spectroscopy Lau, W.S. Khaw, K.K. Qian, P.W. Sandler, N.P. Chu, P.K. ELECTRICAL ENGINEERING Chemical vapor deposition (CVD) Defect states Leakage current Nitrous oxide (N2O) Oxygen Rapid thermal annealing (RTA) Tantalum pentoxide (Ta2O5) Thermally stimulated currrent (TSC) Traps Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 35 5 SUPPL. A 2599-2604 JAPND 2014-10-07T03:12:18Z 2014-10-07T03:12:18Z 1996-05 Review Lau, W.S.,Khaw, K.K.,Qian, P.W.,Sandler, N.P.,Chu, P.K. (1996-05). A comparison of defect states in tantalum pentoxide (Ta2O5) films after rapid thermal annealing in O2 or N2O by zero-bias thermally stimulated current spectroscopy. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 35 (5 SUPPL. A) : 2599-2604. ScholarBank@NUS Repository. 00214922 http://scholarbank.nus.edu.sg/handle/10635/81813 NOT_IN_WOS Scopus
institution National University of Singapore
building NUS Library
country Singapore
collection ScholarBank@NUS
topic Chemical vapor deposition (CVD)
Defect states
Leakage current
Nitrous oxide (N2O)
Oxygen
Rapid thermal annealing (RTA)
Tantalum pentoxide (Ta2O5)
Thermally stimulated currrent (TSC)
Traps
spellingShingle Chemical vapor deposition (CVD)
Defect states
Leakage current
Nitrous oxide (N2O)
Oxygen
Rapid thermal annealing (RTA)
Tantalum pentoxide (Ta2O5)
Thermally stimulated currrent (TSC)
Traps
Lau, W.S.
Khaw, K.K.
Qian, P.W.
Sandler, N.P.
Chu, P.K.
A comparison of defect states in tantalum pentoxide (Ta2O5) films after rapid thermal annealing in O2 or N2O by zero-bias thermally stimulated current spectroscopy
description Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
author2 ELECTRICAL ENGINEERING
author_facet ELECTRICAL ENGINEERING
Lau, W.S.
Khaw, K.K.
Qian, P.W.
Sandler, N.P.
Chu, P.K.
format Review
author Lau, W.S.
Khaw, K.K.
Qian, P.W.
Sandler, N.P.
Chu, P.K.
author_sort Lau, W.S.
title A comparison of defect states in tantalum pentoxide (Ta2O5) films after rapid thermal annealing in O2 or N2O by zero-bias thermally stimulated current spectroscopy
title_short A comparison of defect states in tantalum pentoxide (Ta2O5) films after rapid thermal annealing in O2 or N2O by zero-bias thermally stimulated current spectroscopy
title_full A comparison of defect states in tantalum pentoxide (Ta2O5) films after rapid thermal annealing in O2 or N2O by zero-bias thermally stimulated current spectroscopy
title_fullStr A comparison of defect states in tantalum pentoxide (Ta2O5) films after rapid thermal annealing in O2 or N2O by zero-bias thermally stimulated current spectroscopy
title_full_unstemmed A comparison of defect states in tantalum pentoxide (Ta2O5) films after rapid thermal annealing in O2 or N2O by zero-bias thermally stimulated current spectroscopy
title_sort comparison of defect states in tantalum pentoxide (ta2o5) films after rapid thermal annealing in o2 or n2o by zero-bias thermally stimulated current spectroscopy
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/81813
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