A comparison of defect states in tantalum pentoxide (Ta2O5) films after rapid thermal annealing in O2 or N2O by zero-bias thermally stimulated current spectroscopy
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
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sg-nus-scholar.10635-818132015-01-06T22:27:18Z A comparison of defect states in tantalum pentoxide (Ta2O5) films after rapid thermal annealing in O2 or N2O by zero-bias thermally stimulated current spectroscopy Lau, W.S. Khaw, K.K. Qian, P.W. Sandler, N.P. Chu, P.K. ELECTRICAL ENGINEERING Chemical vapor deposition (CVD) Defect states Leakage current Nitrous oxide (N2O) Oxygen Rapid thermal annealing (RTA) Tantalum pentoxide (Ta2O5) Thermally stimulated currrent (TSC) Traps Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 35 5 SUPPL. A 2599-2604 JAPND 2014-10-07T03:12:18Z 2014-10-07T03:12:18Z 1996-05 Review Lau, W.S.,Khaw, K.K.,Qian, P.W.,Sandler, N.P.,Chu, P.K. (1996-05). A comparison of defect states in tantalum pentoxide (Ta2O5) films after rapid thermal annealing in O2 or N2O by zero-bias thermally stimulated current spectroscopy. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 35 (5 SUPPL. A) : 2599-2604. ScholarBank@NUS Repository. 00214922 http://scholarbank.nus.edu.sg/handle/10635/81813 NOT_IN_WOS Scopus |
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Chemical vapor deposition (CVD) Defect states Leakage current Nitrous oxide (N2O) Oxygen Rapid thermal annealing (RTA) Tantalum pentoxide (Ta2O5) Thermally stimulated currrent (TSC) Traps |
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Chemical vapor deposition (CVD) Defect states Leakage current Nitrous oxide (N2O) Oxygen Rapid thermal annealing (RTA) Tantalum pentoxide (Ta2O5) Thermally stimulated currrent (TSC) Traps Lau, W.S. Khaw, K.K. Qian, P.W. Sandler, N.P. Chu, P.K. A comparison of defect states in tantalum pentoxide (Ta2O5) films after rapid thermal annealing in O2 or N2O by zero-bias thermally stimulated current spectroscopy |
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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
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ELECTRICAL ENGINEERING |
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ELECTRICAL ENGINEERING Lau, W.S. Khaw, K.K. Qian, P.W. Sandler, N.P. Chu, P.K. |
format |
Review |
author |
Lau, W.S. Khaw, K.K. Qian, P.W. Sandler, N.P. Chu, P.K. |
author_sort |
Lau, W.S. |
title |
A comparison of defect states in tantalum pentoxide (Ta2O5) films after rapid thermal annealing in O2 or N2O by zero-bias thermally stimulated current spectroscopy |
title_short |
A comparison of defect states in tantalum pentoxide (Ta2O5) films after rapid thermal annealing in O2 or N2O by zero-bias thermally stimulated current spectroscopy |
title_full |
A comparison of defect states in tantalum pentoxide (Ta2O5) films after rapid thermal annealing in O2 or N2O by zero-bias thermally stimulated current spectroscopy |
title_fullStr |
A comparison of defect states in tantalum pentoxide (Ta2O5) films after rapid thermal annealing in O2 or N2O by zero-bias thermally stimulated current spectroscopy |
title_full_unstemmed |
A comparison of defect states in tantalum pentoxide (Ta2O5) films after rapid thermal annealing in O2 or N2O by zero-bias thermally stimulated current spectroscopy |
title_sort |
comparison of defect states in tantalum pentoxide (ta2o5) films after rapid thermal annealing in o2 or n2o by zero-bias thermally stimulated current spectroscopy |
publishDate |
2014 |
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http://scholarbank.nus.edu.sg/handle/10635/81813 |
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1681089139434323968 |