Evidence that N2O is a stronger oxidizing agent than O2 for the post-deposition annealing of Ta2O5 on Si capacitors

• Main Authors: Lau, W.S., Qian, P.W., Sandler, N.P., McKinley, K.A., Chu, P.K.
• Other Authors: ELECTRICAL ENGINEERING
• Format: Article
• Published: 2014
• Subjects: Chemical vapor deposition (CVD); Cross-sectional transmission electron microscopy (XTEM); Leakage current; Rapid thermal annealing (RTA); Secondary ion mass spectrometry (SIMS); Tantalum pentoxide (Ta2O5)
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/80404
• Institution: National University of Singapore

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers