Evidence that N2O is a stronger oxidizing agent than O2 for the post-deposition annealing of Ta2O5 on Si capacitors
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
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Main Authors: | Lau, W.S., Qian, P.W., Sandler, N.P., McKinley, K.A., Chu, P.K. |
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Other Authors: | ELECTRICAL ENGINEERING |
Format: | Article |
Published: |
2014
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Subjects: | |
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/80404 |
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Institution: | National University of Singapore |
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