Evidence that N2O is a stronger oxidizing agent than O2 for the post-deposition annealing of Ta2O5 on Si capacitors
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
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sg-nus-scholar.10635-804042015-02-03T17:24:31Z Evidence that N2O is a stronger oxidizing agent than O2 for the post-deposition annealing of Ta2O5 on Si capacitors Lau, W.S. Qian, P.W. Sandler, N.P. McKinley, K.A. Chu, P.K. ELECTRICAL ENGINEERING Chemical vapor deposition (CVD) Cross-sectional transmission electron microscopy (XTEM) Leakage current Rapid thermal annealing (RTA) Secondary ion mass spectrometry (SIMS) Tantalum pentoxide (Ta2O5) Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 36 2 661-666 JAPND 2014-10-07T02:57:10Z 2014-10-07T02:57:10Z 1997 Article Lau, W.S.,Qian, P.W.,Sandler, N.P.,McKinley, K.A.,Chu, P.K. (1997). Evidence that N2O is a stronger oxidizing agent than O2 for the post-deposition annealing of Ta2O5 on Si capacitors. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 36 (2) : 661-666. ScholarBank@NUS Repository. 00214922 http://scholarbank.nus.edu.sg/handle/10635/80404 NOT_IN_WOS Scopus |
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Chemical vapor deposition (CVD) Cross-sectional transmission electron microscopy (XTEM) Leakage current Rapid thermal annealing (RTA) Secondary ion mass spectrometry (SIMS) Tantalum pentoxide (Ta2O5) |
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Chemical vapor deposition (CVD) Cross-sectional transmission electron microscopy (XTEM) Leakage current Rapid thermal annealing (RTA) Secondary ion mass spectrometry (SIMS) Tantalum pentoxide (Ta2O5) Lau, W.S. Qian, P.W. Sandler, N.P. McKinley, K.A. Chu, P.K. Evidence that N2O is a stronger oxidizing agent than O2 for the post-deposition annealing of Ta2O5 on Si capacitors |
| description |
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| author2 |
ELECTRICAL ENGINEERING |
| author_facet |
ELECTRICAL ENGINEERING Lau, W.S. Qian, P.W. Sandler, N.P. McKinley, K.A. Chu, P.K. |
| format |
Article |
| author |
Lau, W.S. Qian, P.W. Sandler, N.P. McKinley, K.A. Chu, P.K. |
| author_sort |
Lau, W.S. |
| title |
Evidence that N2O is a stronger oxidizing agent than O2 for the post-deposition annealing of Ta2O5 on Si capacitors |
| title_short |
Evidence that N2O is a stronger oxidizing agent than O2 for the post-deposition annealing of Ta2O5 on Si capacitors |
| title_full |
Evidence that N2O is a stronger oxidizing agent than O2 for the post-deposition annealing of Ta2O5 on Si capacitors |
| title_fullStr |
Evidence that N2O is a stronger oxidizing agent than O2 for the post-deposition annealing of Ta2O5 on Si capacitors |
| title_full_unstemmed |
Evidence that N2O is a stronger oxidizing agent than O2 for the post-deposition annealing of Ta2O5 on Si capacitors |
| title_sort |
evidence that n2o is a stronger oxidizing agent than o2 for the post-deposition annealing of ta2o5 on si capacitors |
| publishDate |
2014 |
| url |
http://scholarbank.nus.edu.sg/handle/10635/80404 |
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1681088881286447104 |