Evidence that N2O is a stronger oxidizing agent than O2 for the post-deposition annealing of Ta2O5 on Si capacitors

Evidence that N2O is a stronger oxidizing agent than O2 for the post-deposition annealing of Ta2O5 on Si capacitors

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Saved in:

Bibliographic Details
Main Authors:	Lau, W.S., Qian, P.W., Sandler, N.P., McKinley, K.A., Chu, P.K.
Other Authors:	ELECTRICAL ENGINEERING
Format:	Article
Published:	2014
Subjects:	Chemical vapor deposition (CVD) Cross-sectional transmission electron microscopy (XTEM) Leakage current Rapid thermal annealing (RTA) Secondary ion mass spectrometry (SIMS) Tantalum pentoxide (Ta2O5)
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/80404
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore

Description
Summary:	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers