Strained n-channel field-effect transistors with channel proximate silicon-carbon source/drain stressors for performance enhancement

by Koh, S.-M., Wong, H.-S., Gong, X., Ng, C.-M., Variam, N., Henry, T., Erokhin, Y., Samudra, G.S., Yeo, Y.-C.
Published 2014

Siliconr: Carbon source/drain stressors: Intégration of a novel nickel aluminide-silicide and post-solid-phase-epitaxy anneal for reduced schottky-barrier and leakage

by Koh, S.-M., Zhou, W.J., Lee, R.T.P., Sinha, M., Ng, C.-M., Zhao, Z., Maynard, H., Variam, N., Erokhin, Y., Samudra, G., Yeo, Y.-C.
Published 2014

Schottky barrier height modulation with aluminum segregation and pulsed laser anneal: A route for contact resistance reduction

by Koh, S.-M., Ng, C.-M., Liu, P., Mo, Z.-Q., Wang, X., Zheng, H., Zhao, Z.-Y., Variam, N., Henry, T., Erokhin, Y., Samudra, G.S., Yeo, Y.-C.
Published 2014