Transient phase change analysis of scaling in phase change devices

by Yeo, E.G., Shi, L., Zhao, R., Chong, C.T., Adesida, I.
Published 2014

A ZnTaOx based resistive switching random access memory

by Zheng, K., Zhao, J. L., Leck, K. S., Teo, K. L., Yeo, E. G., Sun, X. W.
Published 2014

Parasitic capacitance effect on programming performance of phase change random access memory devices

by Yeo, E.G., Shi, L.P., Zhao, R., Lim, K.G., Chong, T.C., Adesida, I.
Published 2014

Transient phase change effect during the crystallization process in phase change memory devices

by Yeo, E.G., Zhao, R., Shi, L.P., Lim, K.G., Chong, T.C., Adesida, I.
Published 2014

Silicides as new electrode/heater for compact integration of phase change memory with CMOS

by Fang, L.W.-W., Zhao, R., Yeo, E.-G., Lim, K.-G., Yang, H., Shi, L., Chong, T.-C., Yeo, Y.-C.
Published 2014

Phase change random access memory devices with nickel silicide and platinum silicide electrode contacts for integration with CMOS technology

by Fang, L.W.-W., Zhao, R., Yeo, E.-G., Lim, K.-G., Yang, H., Shi, L., Chong, T.-C., Yeo, Y.-C.
Published 2014