Parasitic capacitance effect on programming performance of phase change random access memory devices

Parasitic capacitance effect on programming performance of phase change random access memory devices

10.1063/1.3298368

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Bibliographic Details
Main Authors: Yeo, E.G., Shi, L.P., Zhao, R., Lim, K.G., Chong, T.C., Adesida, I.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/56992
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/56992

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