Parasitic capacitance effect on programming performance of phase change random access memory devices

Parasitic capacitance effect on programming performance of phase change random access memory devices

10.1063/1.3298368

Saved in:
Bibliographic Details
Main Authors: Yeo, E.G., Shi, L.P., Zhao, R., Lim, K.G., Chong, T.C., Adesida, I.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/56992
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: National University of Singapore
Description
Summary:10.1063/1.3298368

Similar Items