Parasitic capacitance effect on programming performance of phase change random access memory devices

10.1063/1.3298368

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Bibliographic Details
Main Authors:	Yeo, E.G., Shi, L.P., Zhao, R., Lim, K.G., Chong, T.C., Adesida, I.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/56992
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-56992
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spelling	sg-nus-scholar.10635-569922023-10-26T21:39:26Z Parasitic capacitance effect on programming performance of phase change random access memory devices Yeo, E.G. Shi, L.P. Zhao, R. Lim, K.G. Chong, T.C. Adesida, I. ELECTRICAL & COMPUTER ENGINEERING 10.1063/1.3298368 Applied Physics Letters 96 4 - APPLA 2014-06-17T03:01:01Z 2014-06-17T03:01:01Z 2010 Article Yeo, E.G., Shi, L.P., Zhao, R., Lim, K.G., Chong, T.C., Adesida, I. (2010). Parasitic capacitance effect on programming performance of phase change random access memory devices. Applied Physics Letters 96 (4) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3298368 00036951 http://scholarbank.nus.edu.sg/handle/10635/56992 000274179900097 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1063/1.3298368
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Yeo, E.G. Shi, L.P. Zhao, R. Lim, K.G. Chong, T.C. Adesida, I.
format	Article
author	Yeo, E.G. Shi, L.P. Zhao, R. Lim, K.G. Chong, T.C. Adesida, I.
spellingShingle	Yeo, E.G. Shi, L.P. Zhao, R. Lim, K.G. Chong, T.C. Adesida, I. Parasitic capacitance effect on programming performance of phase change random access memory devices
author_sort	Yeo, E.G.
title	Parasitic capacitance effect on programming performance of phase change random access memory devices
title_short	Parasitic capacitance effect on programming performance of phase change random access memory devices
title_full	Parasitic capacitance effect on programming performance of phase change random access memory devices
title_fullStr	Parasitic capacitance effect on programming performance of phase change random access memory devices
title_full_unstemmed	Parasitic capacitance effect on programming performance of phase change random access memory devices
title_sort	parasitic capacitance effect on programming performance of phase change random access memory devices
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/56992
_version_	1781781324552470528

Parasitic capacitance effect on programming performance of phase change random access memory devices

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