TEKNIK WAFER BONDING DAN ETSA SELEKTIF DALAM FABRIKASI WAFER SOI
Wafer bonding process have been done to support SOI wafer fabrication especially in ELTRAN and SMARTCUT methods. The good quality of wafer bonding was yield by using electrostatic forces (stress >2x 105 N/m2) with carbon electrodes that uses electrical potential around 24 V at 1150°C. On the oth...
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id-itb.:16932004-11-25T10:41:10ZTEKNIK WAFER BONDING DAN ETSA SELEKTIF DALAM FABRIKASI WAFER SOI DARMA, YUDI Indonesia Theses INSTITUT TEKNOLOGI BANDUNG https://digilib.itb.ac.id/gdl/view/1693 Wafer bonding process have been done to support SOI wafer fabrication especially in ELTRAN and SMARTCUT methods. The good quality of wafer bonding was yield by using electrostatic forces (stress >2x 105 N/m2) with carbon electrodes that uses electrical potential around 24 V at 1150°C. On the other hand wafer bonding process can be done by produce 0-H clusters that can be made in H2O2:H2SO4 (I: 1) mixture and continuing with heating treatment at 1150°C (stress > 105 Wm:). Besides, thinning and selective etching are also important process in SOI fabrication. KOH 30% have been chosen to etch silicon layers and yield 2,4 pm/minute etching rate at 80°C. HF:H2O2 (1:5) mixture have been used to selective etching in porous silicon and give 0. 1388 pm/minute etching rate at room temparature and 0.27 pm/minute at 100°C. text |
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Wafer bonding process have been done to support SOI wafer fabrication especially in ELTRAN and SMARTCUT methods. The good quality of wafer bonding was yield by using electrostatic forces (stress >2x 105 N/m2) with carbon electrodes that uses electrical potential around 24 V at 1150°C. On the other hand wafer bonding process can be done by produce 0-H clusters that can be made in H2O2:H2SO4 (I: 1) mixture and continuing with heating treatment at 1150°C (stress > 105 Wm:). Besides, thinning and selective etching are also important process in SOI fabrication. KOH 30% have been chosen to etch silicon layers and yield 2,4 pm/minute etching rate at 80°C. HF:H2O2 (1:5) mixture have been used to selective etching in porous silicon and give 0. 1388 pm/minute etching rate at room temparature and 0.27 pm/minute at 100°C. |
| format |
Theses |
| author |
DARMA, YUDI |
| spellingShingle |
DARMA, YUDI TEKNIK WAFER BONDING DAN ETSA SELEKTIF DALAM FABRIKASI WAFER SOI |
| author_facet |
DARMA, YUDI |
| author_sort |
DARMA, YUDI |
| title |
TEKNIK WAFER BONDING DAN ETSA SELEKTIF DALAM FABRIKASI WAFER SOI |
| title_short |
TEKNIK WAFER BONDING DAN ETSA SELEKTIF DALAM FABRIKASI WAFER SOI |
| title_full |
TEKNIK WAFER BONDING DAN ETSA SELEKTIF DALAM FABRIKASI WAFER SOI |
| title_fullStr |
TEKNIK WAFER BONDING DAN ETSA SELEKTIF DALAM FABRIKASI WAFER SOI |
| title_full_unstemmed |
TEKNIK WAFER BONDING DAN ETSA SELEKTIF DALAM FABRIKASI WAFER SOI |
| title_sort |
teknik wafer bonding dan etsa selektif dalam fabrikasi wafer soi |
| url |
https://digilib.itb.ac.id/gdl/view/1693 |
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