Realization of trenched SOI structure using wafer bonding technique
In this project, the realization of a trenched SOI substrate is carried out, and the characterization of the CMP planarization together with a new polysilicon shallow trench isolation (STI) technique is studied.
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| Format: | Theses and Dissertations |
| Published: |
2008
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| Online Access: | http://hdl.handle.net/10356/3559 |
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| Institution: | Nanyang Technological University |