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Carbon Thin Film was sucessfully deposited on top of silicon (111) substrate with and without HF treatment to the silicon substrate. Carbon thin film was deposited using Unbalance Magetron DC Sputtering. Silicon surface which been modified using HF 1% solution create more uniform thin films. AFM, SE...
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| Format: | Final Project |
| Language: | Indonesia |
| Online Access: | https://digilib.itb.ac.id/gdl/view/18214 |
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| Institution: | Institut Teknologi Bandung |
| Language: | Indonesia |
| Summary: | Carbon Thin Film was sucessfully deposited on top of silicon (111) substrate with and without HF treatment to the silicon substrate. Carbon thin film was deposited using Unbalance Magetron DC Sputtering. Silicon surface which been modified using HF 1% solution create more uniform thin films. AFM, SEM, and EDX results show that surface modification using HF solution enhancing carbon thin film deposition. Furthermore, annealing process and raman spectroscopy characterization was done to studied the thermal stability of carbon thin film on silicon substrate. Raman spectroscopy results show at 6000C carbon thin film relatively stable, while at 9000C carbon thin film showing structural changes. |
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